we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications.all operating parameters must be validated for each customer application by the c ustomer. smd-led 16.11.2007 rev. 04 radiation infrared absolute maximum ratings at t amb = 25c, unless otherwise specified symbol value unit i f 50 ma i fm 150 ma p90mw t amb -40 to +85 c t stg -40 to +90 c electrical and optical characteristics at t amb = 25c, unless otherwise specified parameter test conditions symbol min typ max unit forward voltage i f = 50 ma v f 1,9 2,3 v reverse voltage i f = 100 a v r 5v radiant power i f = 50 ma e 13 mw peak wavelength i f = 50 ma p 740 750 760 nm spectral bandwidth at 50% i f = 50 ma ? 0.5 30 nm viewing angle i f = 50 ma ? 25 deg. switching time i f = 50 ma t r , t f 40 ns note: all measurements carried out with epigap equipment storage temperature range power dissipation operating temperature range peak forward current smd type technology t p 100 s, t p /t 0.1 parameter test onditions applications dc forward current high speed, high power led in standard smd package with lens, compact design allows for easy circuit board mounting and assembling of arrays optical communications, remote control, light barriers, measurement applications and security systems, automation description ELS-750-134 algaas/algaas smd 1206, lens case 1600 1600 3200 1900 500 r 7 50 unit: m tolerance: 100m back side marking marking anode cathode anode epigap optoelektronik gmbh, d-12555 berlin, k?penicker str.325 b, haus 201 tel.: +49-30-6576 2543, fax : +49-30-6576 2545 1 of 1
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